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STL26N65DM2N-Channel 650 V 20A (Tc) 140W (Tc) Surface Mount PowerFlat™ (8x8) HV

1:$1.3720

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STL26N-934967
ManufacturerSTMicroelectronics
MPN #.STL26N65DM2
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetSTL26N65DM2(PDF)
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In Stock: 109
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.3720
Ext. Price$ 1.3720
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$1.3720$4115.0630
6000$1.3150$7892.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberSTL26
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1480 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance206mOhm @ 10A, 10V
Package Type (Mfr.)PowerFlat™ (8x8) HV
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STL26N65DM2
PCN Design/Specification
STLYYY 22/Dec/2020
PCN Packaging
Material Barrier Bag 17/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL26N65DM2 is an N-channel power MOSFET manufactured by STMicroelectronics, designed for high-voltage applications. It operates at a maximum voltage of 650 V and can handle a continuous current of 20 A when mounted on a surface, with a power dissipation capacity of up to 140 W. This MOSFET comes in a compact PowerFlat™ (8x8) package, making it suitable for space-constrained designs. Key electrical characteristics include a gate threshold voltage of 5 V at 250 µA, a typical input capacitance of 1480 pF at 100 V, and a low on-state resistance of 206 mOhm at 10 A current and 10 V gate voltage, ensuring efficient performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.