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STL18N65M5N-Channel 650 V 15A (Tc) 57W (Tc) Surface Mount PowerFlat™ (5x6)
1:$2.5310
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ABRmicro #.ABR2045-STL18N-980339
ManufacturerSTMicroelectronics
MPN #.STL18N65M5
Estimated Lead Time14 Weeks
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DatasheetSTL18N65M5(PDF)
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In Stock: 12016
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.5310
Ext. Price$ 2.5310
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5310$2.5310
10$2.1240$21.2390
100$1.7180$171.8060
500$1.5280$763.9380
1000$1.3080$1307.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL18
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1240 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation57W (Tc)
RDS(on) Drain-to-Source On Resistance240mOhm @ 7.5A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL18N65M5 is a surface-mount N-Channel MOSFET manufactured by STMicroelectronics, featuring a voltage rating of 650V and a continuous current capacity of 15A at the case temperature (Tc). Encased in the compact PowerFlat™ (5x6) package, this MOSFET offers efficient on-state performance with a maximum on-resistance of 240mOhm when conducting 7.5A at 10V. The design includes a 1240 pF input capacitance at 100 V, facilitating optimal switching characteristics suitable for power management tasks within its electrical specifications.
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