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STL130N6F7N-Channel 60 V 130A (Tc) 4.8W (Ta), 125W (Tc) Surface Mount PowerFlat™ (5x6)

1:$1.7270

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STL130-1029428
ManufacturerSTMicroelectronics
MPN #.STL130N6F7
Estimated Lead Time26 Weeks
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In Stock: 7968
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.7270
Ext. Price$ 1.7270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7270$1.7270
10$1.4380$14.3760
100$1.1430$114.3250
500$0.9680$483.9690
1000$0.8210$821.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™ F7
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL130
Continuous Drain Current (ID) @ 25°C130A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2600 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation4.8W (Ta), 125W (Tc)
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 13A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL130N6F7, manufactured by STMicroelectronics, is an N-Channel MOSFET designed for efficient power management. Encased in a compact PowerFlat™ 5x6 surface mount package, it supports a maximum voltage of 60V and a current capacity of 130A at Tc. The MOSFET can dissipate up to 4.8W in free air (Ta) and 125W with suitable thermal management (Tc). It features a gate threshold voltage of ±20V and operates with a gate-source voltage of 4V at 250µA, making it suitable for applications requiring low on-resistance and high switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.