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STL12N65M5N-Channel 650 V 8.5A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6)

1:$1.2030

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STL12N-921092
ManufacturerSTMicroelectronics
MPN #.STL12N65M5
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTL12N65M5(PDF)
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In Stock: 39
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.2030
Ext. Price$ 1.2030
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$1.2030$3608.2500
6000$1.1540$6923.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ V
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSTL12
Continuous Drain Current (ID) @ 25°C8.5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)644 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance530mOhm @ 4.25A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STL12N65M5
PCN Obsolescence/ EOL
IPD/15/9345 04/Aug/2015
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL12N65M5 is a power MOSFET manufactured by STMicroelectronics, featuring an N-Channel configuration with a voltage rating of 650 V and a current capability of 8.5A at Tc conditions. It is designed for high efficiency in power management, housed in a compact Surface Mount PowerFlat™ (5x6) package. The MOSFET offers a power dissipation of 48W at Tc, presenting a capacitance of 644 pF at 100 V, and is optimized for use with a gate-source voltage of 10V.
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