Image is for reference only, the actual product serves as the standard.
STL120N8F7N-Channel 80 V 120A (Tc) 4.8W (Ta), 140W (Tc) Surface Mount PowerFlat™ (5x6)
1:$1.8990
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STL120-934481
ManufacturerSTMicroelectronics
MPN #.STL120N8F7
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetSTL120N8F7(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 3306
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.8990
Ext. Price$ 1.8990
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8990$1.8990
10$1.5770$15.7680
100$1.2550$125.4810
500$1.0610$530.7190
1000$0.9010$901.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesSTripFET™ F7
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4570 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation4.8W (Ta), 140W (Tc)
RDS(on) Drain-to-Source On Resistance4.4mOhm @ 11.5A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL120N8F7 is an N-channel MOSFET produced by STMicroelectronics, designed to handle a maximum voltage of 80V and a continuous current of up to 120A when measured at case temperature (Tc). The device dissipates 4.8W of power in free air (Ta) and can withstand up to 140W when mounted on a suitable heat sink at the case temperature. It features a gate threshold voltage of 10V and a total gate charge of 60 nC at 10V, allowing for efficient switching performance. This MOSFET is housed in a compact Surface Mount PowerFlat™ package (5x6), optimized for efficient thermal performance and board space utilization.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.