STI13NM60NN-Channel 600 V 11A (Tc) 90W (Tc) Through Hole I2PAK
1:$0.7540
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ABRmicro #.ABR2045-STI13N-1008768
ManufacturerSTMicroelectronics
MPN #.STI13NM60N
Estimated Lead Time16 Weeks
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Datasheet
STF,I,P,U,W13NM60N(PDF)
STF,I,P,U,W13NM60N(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7540
Ext. Price$ 0.7540
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$0.7540$754.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTI13
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)790 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation90W (Tc)
RDS(on) Drain-to-Source On Resistance360mOhm @ 5.5A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STI13NM60N is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high-voltage applications. It features a drain-source voltage rating of 600 V and a continuous drain current of 11 A, making it suitable for handling significant power loads. Encased in an I2PAK through-hole package, the MOSFET ensures effective thermal management with a power dissipation capacity of 90W. Key performance parameters include an input capacitance of 790 pF at 50 V and a drain-source on-resistance of 360 mOhms at a drain current of 5.5A and gate-source voltage of 10V.
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