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STI11NM60NDN-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK

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ABRmicro #.ABR2045-STI11N-1008859
ManufacturerSTMicroelectronics
MPN #.STI11NM60ND
Estimated Lead Time-
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DatasheetDatasheetSTx11NM60ND(PDF)
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In Stock: 18
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesFDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTI11N
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)850 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation90W (Tc)
RDS(on) Drain-to-Source On Resistance450mOhm @ 5A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx11NM60ND
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STI11NM60ND is a power MOSFET manufactured by STMicroelectronics, featuring an N-channel configuration. It is designed to handle a maximum voltage of 600 volts and a current of 10 amps under specified conditions. The device offers a robust power dissipation capability of 90 watts when properly mounted. Packaged in a through-hole I2PAK form, it supports gate-source voltages up to ±25 volts and has a gate threshold voltage of 10 volts, making it suitable for a variety of high-power switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.