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STH22N95K5-2AGN-Channel 950 V 17.5A (Tc) 250W (Tc) Surface Mount H2PAK-2

1:$5.2150

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STH22N-930713
ManufacturerSTMicroelectronics
MPN #.STH22N95K5-2AG
Estimated Lead Time14 Weeks
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In Stock: 9
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 5.2150
Ext. Price$ 5.2150
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.2150$5.2150
10$4.4720$44.7210
100$3.7260$372.6190
500$3.2870$1643.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTH22
Continuous Drain Current (ID) @ 25°C17.5A (Tc)
Drain-to-Source Voltage (VDS)950 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1550 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation250W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance330mOhm @ 9A, 10V
Package Type (Mfr.)H2PAK-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STH22N95K5-2AG is an N-channel MOSFET manufactured by STMicroelectronics, featuring a voltage rating of 950 V and a current handling capability of 17.5 A at case temperature (Tc). It is designed with a surface mount H2PAK-2 package, supporting efficient power handling with a power dissipation capacity of 250 W at Tc. This MOSFET exhibits a gate charge of 48 nC at 10 V and a capacitance of 1550 pF at 100 V, and operates with a gate threshold voltage of 10 V, making it suitable for high-voltage applications requiring robust and reliable switching characteristics.
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