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STH185N10F3-6N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

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ABRmicro #.ABR2045-STH185-1034054
ManufacturerSTMicroelectronics
MPN #.STH185N10F3-6
Estimated Lead Time-
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In Stock: 12
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesSTripFET™ F3
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTH185
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)114.6 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6665 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation315W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance4.5mOhm @ 60A, 10V
Package Type (Mfr.)H2PAK-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Assembly/Origin
Mult Devices Testing 10/May/2018
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STH185N10F3-6, manufactured by STMicroelectronics, is a surface-mount N-channel MOSFET housed in an H2PAK-6 package. It is designed to handle a maximum voltage of 100 V and can support a continuous current of 180A when mounted on an appropriate heat sink at a case temperature. The device can dissipate up to 315 watts under similar thermal conditions. It features a gate charge of 114.6 nanocoulombs at 10 V and a threshold voltage of 4 V at 250 microamperes, indicating its efficient switching capabilities. This MOSFET is suited for high power applications, offering robust performance with a reliable structure.
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