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STH140N6F7-2N-Channel 60 V 80A (Tc) 158W (Tc) Surface Mount H2PAK-2

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ABRmicro #.ABR2045-STH140-1019400
ManufacturerSTMicroelectronics
MPN #.STH140N6F7-2
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTH140N6F7-2,6(PDF)
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In Stock: 4
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesDeepGATE™, STripFET™ VII
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTH140
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2700 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature175°C (TJ)
Maximum Power Dissipation158W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 40A, 10V
Package Type (Mfr.)H2PAK-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STH140N6F7-2,6
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STH140N6F7-2 by STMicroelectronics is a surface-mount N-Channel MOSFET designed for high-performance applications. Featuring a compact H2PAK-2 package, it can handle a maximum drain-source voltage of 60V and a continuous current of 80A at the case temperature. The device also supports a power dissipation of 158W at the case temperature, ensuring efficient thermal management. With a gate-source voltage tolerance of ±20V and a capacitance of 2700 pF at 25 V, this MOSFET offers reliable performance in demanding electronic environments.
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