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STFW42N60M2-EPN-Channel 600 V 34A (Tc) 63W (Tc) Through Hole TO-3PF

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ABRmicro #.ABR2045-STFW42-915940
ManufacturerSTMicroelectronics
MPN #.STFW42N60M2-EP
Estimated Lead Time-
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DatasheetDatasheetSTF(W)42N60M2-EP(PDF)
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
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Tube
Shipping DateNovember 10, 2024
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Technical Specifications
SeriesMDmesh™ M2
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTFW42
Continuous Drain Current (ID) @ 25°C34A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2370 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance87mOhm @ 17A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STF(W)42N60M2-EP
PCN Obsolescence/ EOL
DK OBS NOTICE
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)