STFU16N65M2N-Channel 650 V 11A (Tc) 25W (Tc) Through Hole TO-220FP
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ABRmicro #.ABR2045-STFU16-996223
ManufacturerSTMicroelectronics
MPN #.STFU16N65M2
Estimated Lead Time-
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Datasheet
STFU16N65M2(PDF)
STFU16N65M2(PDF)
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™ M2
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTFU16
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)718 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance360mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STFU16N65M2 is an N-channel MOSFET manufactured by STMicroelectronics, designed for high voltage applications with a maximum voltage rating of 650V. It features a current capacity of 11A when operated with proper thermal management (Tc) and can handle up to 25W of power dissipation under optimal conditions. The part comes in a TO-220FP package, facilitating through-hole mounting. Key electrical characteristics include a gate-source threshold voltage of 10V, a total gate charge of 19.5 nC at 10V, and an input capacitance of 718 pF measured at 100V.
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