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STFU15N80K5N-Channel 800 V 14A (Tc) 35W (Tc) Through Hole TO-220FP
1:$2.3330
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STFU15-1033144
ManufacturerSTMicroelectronics
MPN #.STFU15N80K5
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetSTFU15N80K5(PDF)
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In Stock: 688
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.3330
Ext. Price$ 2.3330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3330$2.3330
50$1.8520$92.5970
100$1.5870$158.7380
500$1.5520$776.1560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesMDmesh™ K5
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTFU15
Continuous Drain Current (ID) @ 25°C14A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1100 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance375mOhm @ 7A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STFU15N80K5 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high voltage and high current applications. It features a maximum voltage of 800 V and can handle a continuous current of 14A when mounted on a proper heat sink (Tc). The power dissipation capacity is 35W, making it suitable for applications requiring efficient power handling. This MOSFET comes in a TO-220FP through-hole package, offering a balance of performance and ease of mounting. Additionally, it has a total gate charge of 32 nC at 10 V, with a gate-source threshold voltage of ±30V, highlighting its robustness in handling voltage variations effectively.
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