ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
STFI34N65M5N-Channel 650 V 28A (Tc) 35W (Tc) Through Hole TO-281 (I2PAKFP)

1:$4.7360

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STFI34-938755
ManufacturerSTMicroelectronics
MPN #.STFI34N65M5
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTF,FI34N65M5(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 1044
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 4.7360
Ext. Price$ 4.7360
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.7360$4.7360
50$3.7530$187.6380
100$3.2160$321.6190
500$2.8590$1429.5940
1000$2.4490$2449.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
STMicroelectronics
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
STP100N10F7$1.7520
STMicroelectronics
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
STU2NK100Z$1.9410
STMicroelectronics
N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
STU75N3LLH6-SN/A
STMicroelectronics
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
STW34NB20N/A
STMicroelectronics
N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
STW69N65M5$7.0440
STMicroelectronics
N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
STW9NK95Z$2.6060
STMicroelectronics
N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
Technical Specifications
SeriesMDmesh™ V
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTFI34N
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)62.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2700 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 14A, 10V
Package Type (Mfr.)TO-281 (I2PAKFP)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-262-3 Full Pack, I2PAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STF,FI34N65M5
Other Related Documents
STFI15N65M5 View All Specifications
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STFI34N65M5 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high voltage and high current applications. This component can handle a maximum voltage of 650 volts and a continuous current of 28 amps, with a power dissipation of 35 watts under specified conditions. It features a typical input capacitance of 2700 pF at 100 volts and a gate charge of 62.5 nC at 10 volts. The MOSFET is encased in a TO-281 (I2PAKFP) through-hole package, which provides efficient thermal management for reliable performance in demanding operational settings.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.