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STFI15N60M2-EPN-Channel 600 V 11A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

1:$1.8640

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STFI15-972962
ManufacturerSTMicroelectronics
MPN #.STFI15N60M2-EP
Estimated Lead Time-
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DatasheetDatasheetSTF(I)15N60M2-EP(PDF)
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In Stock: 1047
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.8640
Ext. Price$ 1.8640
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8640$1.8640
50$1.4960$74.8000
100$1.2300$123.0380
500$1.0410$520.6250
1000$0.8830$882.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ M2
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTFI15N
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)590 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance378mOhm @ 5.5A, 10V
Package Type (Mfr.)I2PAKFP (TO-281)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Full Pack, I2PAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STF(I)15N60M2-EP
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STFI15N60M2-EP is an N-channel MOSFET from STMicroelectronics, designed to handle a maximum voltage of 600V and a current of 11A under specific conditions (Tc). It features a maximum power dissipation of 25W when properly mounted and utilized. The MOSFET is housed in a through-hole I2PAKFP (TO-281) package, providing ease of installation in various circuit designs. With an on-resistance of 378mOhm at 5.5A with a gate-source voltage of 10V, it enables efficient switching performance. Additionally, the device can tolerate a gate-source voltage of ±25V, ensuring flexibility in different electrical environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.