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STFI12N60M2N-Channel 600 V 9A (Tc) 25W (Tc) Through Hole TO-281 (I2PAKFP)

1:$1.3860

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ABRmicro #.ABR2045-STFI12-1001743
ManufacturerSTMicroelectronics
MPN #.STFI12N60M2
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTFI12N60M2(PDF)
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In Stock: 1040
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3860
Ext. Price$ 1.3860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3860$1.3860
50$1.1160$55.7810
100$0.9180$91.8000
500$0.7770$388.3440
1000$0.6590$658.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ M2
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTFI12N
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)538 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance450mOhm @ 4.5A, 10V
Package Type (Mfr.)TO-281 (I2PAKFP)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Full Pack, I2PAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STFI12N60M2
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STFI12N60M2 is an N-channel power MOSFET manufactured by STMicroelectronics. It is designed to handle a maximum voltage of 600 V and a continuous current of 9 A when used with appropriate cooling. This MOSFET features a power dissipation of 25 W at the case temperature and is encased in a TO-281 (I2PAKFP) package suitable for through-hole mounting. Its gate charge is measured at 16 nC at 10 V, and it possesses an input capacitance of 538 pF at 100 V. This combination of specifications makes it a versatile component for handling substantial voltages and currents in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.