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STF8NK85ZN-Channel 850 V 6.7A (Tc) 35W (Tc) Through Hole TO-220FP

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ABRmicro #.ABR2045-STF8NK-939938
ManufacturerSTMicroelectronics
MPN #.STF8NK85Z
Estimated Lead Time-
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In Stock: 5
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Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTF8N
Continuous Drain Current (ID) @ 25°C6.7A (Tc)
Drain-to-Source Voltage (VDS)850 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1870 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 3.35A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 100µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF8NK85Z is a semiconductor component manufactured by STMicroelectronics, featuring an N-Channel configuration capable of handling 850 volts and 6.7 amperes at the case temperature. With a power dissipation capacity of 35 watts when attached to a suitable heatsink, this component is housed in a TO-220FP through-hole package, which provides insulation from the mounting surface. The device exhibits a drain-source on-resistance of 1.4 ohms at a current of 3.35 amperes and a gate-source voltage of 10 volts. Its input capacitance is rated at 1870 picofarads when measured at 25 volts.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.