STF7N65M2N-Channel 650 V 5A (Tc) 20W (Tc) Through Hole TO-220FP
1:$1.2990
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ABRmicro #.ABR2045-STF7N6-984804
ManufacturerSTMicroelectronics
MPN #.STF7N65M2
Estimated Lead Time-
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Datasheet
STF7N65M2(PDF)
STF7N65M2(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2990
Ext. Price$ 1.2990
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2990$1.2990
50$1.0440$52.2220
100$0.8590$85.8500
500$0.7270$363.3750
1000$0.6160$616.2500
2000$0.5850$1170.8750
5000$0.5630$2815.6250
10000$0.5450$5450.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF7
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)270 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation20W (Tc)
RDS(on) Drain-to-Source On Resistance1.15Ohm @ 2.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF7N65M2 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for use in high-voltage applications. It supports a maximum drain-source voltage of 650 V and can handle a continuous drain current of 5A when mounted on an adequately heat-sinked TO-220FP through-hole package. The component dissipates up to 20W of power under optimal thermal conditions. Its gate threshold voltage is rated at ±25V, and it requires a gate-source voltage of 4V to conduct at a minimal current level of 250µA. With an input capacitance of 270 pF at a drain-source voltage of 100 V, it is suited for high-speed switching operations.
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