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STF7N60DM2N-Channel 600 V 6A (Tc) 25W (Tc) Through Hole TO-220FP

1:$1.2480

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STF7N6-1008822
ManufacturerSTMicroelectronics
MPN #.STF7N60DM2
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetSTF7N60DM2(PDF)
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In Stock: 1392
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2480
Ext. Price$ 1.2480
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2480$1.2480
10$1.0220$10.2210
100$0.7940$79.3690
500$0.6730$336.2810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusActive
Base Product NumberSTF7
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)324 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance900mOhm @ 3A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.75V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STF7N60DM2
PCN Assembly/Origin
Wafer 15/Feb/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF7N60DM2 is a component manufactured by STMicroelectronics, featuring an N-Channel configuration with a voltage rating of 600 V and a current capacity of 6 A at a specified case temperature. It dissipates power up to 25 W in a TO-220FP through-hole package, offering efficient thermal management. The part exhibits a low gate charge of 7.5 nC at 10 V and has an on-resistance of 900 mOhm when conducting 3 A at 10 V. Its input capacitance is measured at 324 pF at 100 V, making it suitable for specific electrical designs requiring these parameters.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.