STF6N65M2N-Channel 650 V 4A (Tc) 20W (Tc) Through Hole TO-220FP
1:$1.3260
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ABRmicro #.ABR2045-STF6N6-1005170
ManufacturerSTMicroelectronics
MPN #.STF6N65M2
Estimated Lead Time-
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Datasheet
ST(F,P,U)6N65M2(PDF)
ST(F,P,U)6N65M2(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3260
Ext. Price$ 1.3260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3260$1.3260
50$1.0640$53.1780
100$0.8440$84.3630
500$0.7150$357.5310
1000$0.5820$582.2500
2000$0.5470$1094.3750
5000$0.5220$2608.4380
10000$0.4970$4972.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF6
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)226 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation20W (Tc)
RDS(on) Drain-to-Source On Resistance1.35Ohm @ 2A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
PCN Assembly/Origin
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF6N65M2 is a power MOSFET manufactured by STMicroelectronics, featuring an N-channel configuration capable of handling voltages up to 650 V and a continuous current of 4A when appropriately heat-sinked, with a power dissipation of 20W in suitable thermal conditions. Housed in a TO-220FP through-hole package, this component exhibits an on-resistance of 1.35 Ohms at a drain current of 2A and a gate-source voltage of 10V. It supports a gate threshold voltage of 4V at a minimal 250µA drain-source current, and can tolerate gate-source voltages up to ±25V, making it suitable for a variety of high-voltage and moderate-current applications where efficient switching is crucial.
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