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STF6N60DM2N-Channel 600 V 5A (Tc) 20W (Tc) Through Hole TO-220FP

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ABRmicro #.ABR2045-STF6N6-1001154
ManufacturerSTMicroelectronics
MPN #.STF6N60DM2
Estimated Lead Time-
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DatasheetDatasheetSTF6N60DM2(PDF)
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In Stock: 20
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTF6
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)274 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation20W (Tc)
RDS(on) Drain-to-Source On Resistance1.1Ohm @ 2.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.75V @ 250µA
Package / CaseTO-220-3 Full Pack
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Extended Links
Datasheets
STF6N60DM2
PCN Obsolescence/ EOL
DK OBS NOTICE
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF6N60DM2 is a power MOSFET produced by STMicroelectronics, characterized by its N-channel configuration capable of handling a voltage of up to 600 volts. It is designed to deliver a continuous current of 5 amperes and a power dissipation of 20 watts when properly mounted. This component is housed in a TO-220FP through-hole package, which provides a compact and efficient solution for heat dissipation. Key electrical parameters include a threshold voltage of 10 volts and a gate threshold voltage of 4.75 volts at a current of 250 microamperes. The component exhibits an on-resistance of 1.1 ohms at a drain current of 2.5 amperes and a gate-source voltage of 10 volts, making it suitable for various power switching applications requiring high voltage tolerance and robust performance.
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