STF5N60M2N-Channel 600 V 3.7A (Tc) 20W (Tc) Through Hole TO-220FP
1:$1.0180
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ABRmicro #.ABR2045-STF5N6-935650
ManufacturerSTMicroelectronics
MPN #.STF5N60M2
Estimated Lead Time16 Weeks
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Datasheet
STF5N60M2(PDF)
STF5N60M2(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.0180
Ext. Price$ 1.0180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$1.0180$50.8940
100$0.8060$80.6440
250$0.7990$199.7500
500$0.6840$342.1250
1250$0.5570$695.9380
2500$0.5240$1309.5310
5000$0.4990$2496.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ II Plus
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF5N60
Continuous Drain Current (ID) @ 25°C3.7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)4.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)165 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation20W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 1.85A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF5N60M2 is a power MOSFET manufactured by STMicroelectronics featuring an N-Channel configuration capable of handling a voltage of up to 600 V and a continuous current of 3.7A at thermal conditions. It is housed in a TO-220FP package, which supports a power dissipation of 20W under specified conditions. The on-resistance of this MOSFET is 1.4 Ohms when conducting a current of 1.85A at a gate voltage of 10V. It has a gate threshold voltage of 4V with a gate leakage current of 250µA. Additionally, it exhibits a low input capacitance of 165 pF when biased at 100 V, making it suitable for use in applications requiring efficient high-voltage switching.
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