STF43N60DM2N-Channel 600 V 34A (Tc) 40W (Tc) Through Hole TO-220FP
1:$5.1640
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ABRmicro #.ABR2045-STF43N-1016236
ManufacturerSTMicroelectronics
MPN #.STF43N60DM2
Estimated Lead Time16 Weeks
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Datasheet
STF43N60DM2(PDF)
STF43N60DM2(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.1640
Ext. Price$ 5.1640
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.1640$5.1640
50$4.0930$204.6380
100$3.5070$350.7310
500$3.1180$1559.2190
1000$2.6700$2670.0630
2000$2.5140$5027.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF43
Continuous Drain Current (ID) @ 25°C34A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2500 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance93mOhm @ 17A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF43N60DM2 is a power MOSFET manufactured by STMicroelectronics. It features an N-Channel design with a maximum voltage rating of 600 V and a continuous current capacity of 34A at a defined case temperature. The device offers a power dissipation capability of 40W, also specified at a defined case temperature, and is encapsulated in a TO-220FP through-hole package. It is designed to handle gate-source voltages up to ±25 V, with a total gate charge of 56 nC when operated at a gate voltage of 10 V. The device is engineered for efficient switching performance with a threshold voltage of 10 V.
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