STF28NM60NDN-Channel 600 V 23A (Tc) 35W (Tc) Through Hole TO-220FP
1:$6.9580
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ABRmicro #.ABR2045-STF28N-1022359
ManufacturerSTMicroelectronics
MPN #.STF28NM60ND
Estimated Lead Time-
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Datasheet
ST(B,F,P,W)28NM60ND Datasheet(PDF)
ST(B,F,P,W)28NM60ND Datasheet(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 6.9580
Ext. Price$ 6.9580
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.9580$6.9580
50$5.5540$277.6840
100$4.9690$496.9310
500$4.3840$2191.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesFDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTF28
Continuous Drain Current (ID) @ 25°C23A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)62.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2090 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance150mOhm @ 11.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF28NM60ND is an N-channel MOSFET manufactured by STMicroelectronics, designed for high-voltage applications. It operates with a drain-source voltage of up to 600 V and can carry a continuous drain current of 23 A when properly mounted to dissipate heat, with a maximum power dissipation of 35 W at the case (Tc). Encased in a TO-220FP through-hole package, it provides efficient electrical conductivity with an on-resistance that enhances the switching performance. This component features a gate threshold voltage of 5V with a manageable gate charge of 62.5 nC at 10 V, making it suitable for handling significant loads within its voltage and current ratings.
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