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STF28N65M2N-Channel 650 V 20A (Tc) 30W (Tc) Through Hole TO-220FP

1:$2.4710

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ABRmicro #.ABR2045-STF28N-991426
ManufacturerSTMicroelectronics
MPN #.STF28N65M2
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetSTx28N65M2(PDF)
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In Stock: 1378
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.4710
Ext. Price$ 2.4710
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4710$2.4710
50$1.9580$97.9090
100$1.6780$167.7690
500$1.4920$745.8750
1000$1.2770$1277.1250
2000$1.2030$2405.5000
5000$1.1540$5769.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ M2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF28
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1440 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance180mOhm @ 10A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx28N65M2
PCN Assembly/Origin
Mult Dev Assembly Site 02/Apr/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF28N65M2 is a component manufactured by STMicroelectronics, designed as an N-Channel MOSFET with a voltage rating of 650 V and a current capacity of 20 A at case temperature (Tc). It has a power dissipation of 30 W at Tc and is enclosed in a TO-220FP through-hole package for ease of mounting. The device operates with a gate threshold voltage of 10 V, and it features a gate-source voltage specification of 4 V at 250µA. This MOSFET is a reliable choice for managing high voltage and current in various electronic circuits.
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