STF27N60M2-EPN-Channel 600 V 20A (Tc) 30W (Tc) Through Hole TO-220FP
1:$1.6490
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STF27N-940738
ManufacturerSTMicroelectronics
MPN #.STF27N60M2-EP
Estimated Lead Time16 Weeks
SampleGet Free Sample
Datasheet
STF27N60M2-EP Datasheet(PDF)
STF27N60M2-EP Datasheet(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 693
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.6490
Ext. Price$ 1.6490
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6490$1.6490
50$1.3070$65.3440
100$1.1200$111.9880
500$1.0970$548.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
Technical Specifications
SeriesMDmesh™ M2-EP
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF27
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1320 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance163mOhm @ 10A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.75V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Design Resources
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF27N60M2-EP is an N-channel power MOSFET manufactured by STMicroelectronics, featuring a maximum voltage rating of 600 V and a current capacity of 20 A at standard conditions. Housed in a TO-220FP package, it supports through-hole mounting, enhancing its ease of integration into various designs. The device exhibits an on-resistance of 163 mOhms at a gate-source voltage of 10 V and a current of 10 A. It can manage a power dissipation of up to 30 W, providing efficient performance with a gate charge of 33 nC when driven at 10 V, and supports gate-source voltage limits of ±25 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.