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STF25NM50NN-Channel 500 V 22A (Tc) 40W (Tc) Through Hole TO-220FP

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ABRmicro #.ABR2045-STF25N-1015520
ManufacturerSTMicroelectronics
MPN #.STF25NM50N
Estimated Lead Time-
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DatasheetDatasheetSTx25NM50N(PDF)
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In Stock: 19
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTF25
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2565 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance140mOhm @ 11A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx25NM50N
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF25NM50N is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high voltage and current handling capabilities. It operates at a maximum drain-source voltage of 500 V and can conduct a continuous drain current of 22A when mounted on a suitable heat sink. Encased in a TO-220FP package, it offers low thermal resistance and effective heat dissipation. The device features a gate threshold voltage of 10V, with an input capacitance of 2565 pF at 25 V, making it suitable for fast switching applications. Additionally, it presents an on-state resistance of 140mOhm at 11A and 10V, enabling efficient power management.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.