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STF25N10F7N-Channel 100 V 19A (Tc) 25W (Tc) Through Hole TO-220FP

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ABRmicro #.ABR2045-STF25N-1035539
ManufacturerSTMicroelectronics
MPN #.STF25N10F7
Estimated Lead Time-
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In Stock: 9
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Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesDeepGATE™, STripFET™ VII
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTF25
Continuous Drain Current (ID) @ 25°C19A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)920 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 12.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-220-3 Full Pack
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PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF25N10F7 is an N-channel MOSFET manufactured by STMicroelectronics, designed for on-off control and switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 19A when housed in a TO-220FP through-hole package. This MOSFET offers a low on-state resistance of 35 milliohms at a gate-source voltage of 10V and a drain current of 12.5A, contributing to efficient performance with reduced heat dissipation. Additionally, it has an input capacitance of 920 pF at 50V. With a power dissipation of up to 25W under specified thermal conditions, it suits various electronic applications requiring reliable voltage and current handling.
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