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STF21NM60NN-Channel 600 V 17A (Tc) 30W (Tc) Through Hole TO-220FP

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ABRmicro #.ABR2045-STF21N-978962
ManufacturerSTMicroelectronics
MPN #.STF21NM60N
Estimated Lead Time-
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DatasheetDatasheetSTx21NM60N(-1)(PDF)
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In Stock: 3
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTF21
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)66 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance220mOhm @ 8.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx21NM60N(-1)
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF21NM60N is an N-channel MOSFET manufactured by STMicroelectronics, designed for high-voltage applications with a maximum voltage rating of 600 V. It can handle a continuous current of up to 17A when properly mounted (case temperature conditions), and it dissipates power up to 30W at the case level. This MOSFET is encapsulated in a TO-220FP package, providing reliable performance with its isolated tab. It features a gate threshold voltage of 4V at 250µA and a total gate charge of 66 nC at 10 V. The device also exhibits an input capacitance of 1900 pF at a test condition of 50 V, making it suitable for efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.