STF18NM80N-Channel 800 V 17A (Tc) 40W (Tc) Through Hole TO-220FP
1:$4.3170
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ABRmicro #.ABR2045-STF18N-1039523
ManufacturerSTMicroelectronics
MPN #.STF18NM80
Estimated Lead Time14 Weeks
SampleGet Free Sample
Datasheet
STx18NM80(PDF)
STx18NM80(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 4.3170
Ext. Price$ 4.3170
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.3170$4.3170
50$3.4440$172.1780
100$3.1910$319.0690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF18
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2070 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance295mOhm @ 8.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
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PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF18NM80 is a TO-220FP package N-channel MOSFET manufactured by STMicroelectronics. It is designed for high-voltage applications, offering a drain-source voltage of 800 V and a continuous drain current of 17 A at a case temperature. The device dissipates up to 40 W of power under the specified thermal conditions. It features a total gate charge of 70 nanocoulombs when driven with a gate-source voltage of 10 V, a gate threshold voltage of 5 V at a gate current of 250 microamps, and an input capacitance of 2070 picofarads measured at a drain-source voltage of 50 V. The packaging allows for efficient heat dissipation, making it suitable for through-hole mounting.
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