STF16N65M2N-Channel 650 V 11A (Tc) 25W (Tc) Through Hole TO-220FP
1:$1.7960
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ABRmicro #.ABR2045-STF16N-963409
ManufacturerSTMicroelectronics
MPN #.STF16N65M2
Estimated Lead Time16 Weeks
SampleGet Free Sample
Datasheet
STF16N65M2(PDF)
STF16N65M2(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.7960
Ext. Price$ 1.7960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7960$1.7960
50$1.4420$72.0910
100$1.1860$118.5750
500$1.0040$502.0310
1000$0.8510$851.0630
2000$0.8100$1619.2500
5000$0.7790$3894.0630
10000$0.7530$7533.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ M2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF16
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)718 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance360mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF16N65M2 is an N-Channel MOSFET manufactured by STMicroelectronics, designed to handle a maximum voltage of 650 V and provides an 11A continuous current (under conditions of adequate thermal management). Encased in a TO-220FP package, this through-hole transistor offers a power dissipation capacity of up to 25W. It features a gate-source voltage rating of ±25V and requires a threshold voltage of 4V at a drain current of 250µA. The metal-oxide-semiconductor (MOS) structure of this device helps in efficient switching performance, making it a robust component for managing high voltages and currents.
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