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STF15N95K5N-Channel 950 V 12A (Tc) 30W (Tc) Through Hole TO-220FP
1:$2.6150
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ABRmicro #.ABR2045-STF15N-990076
ManufacturerSTMicroelectronics
MPN #.STF15N95K5
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetSTx15N95K5(PDF)
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In Stock: 700
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.6150
Ext. Price$ 2.6150
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.6150$2.6150
50$2.0730$103.6470
100$1.7780$177.7560
500$1.7380$869.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesSuperMESH5™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF15
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)950 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance500mOhm @ 6A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF15N95K5 is a semiconductor component manufactured by STMicroelectronics, featuring an N-Channel configuration. It is designed to handle a maximum voltage of 950 V and a continuous current of 12A when mounted on a suitable heat sink. This transistor is housed in a TO-220FP package, which offers through-hole mounting for increased durability and thermal management efficiency. The part has a power dissipation capacity of 30W under specified conditions and operates with a gate threshold voltage of 10V, with a typical gate-to-source voltage requirement of 5V to sustain a current of 100µA. Additionally, the device exhibits a typical input capacitance of 900 pF at 100 V, making it suitable for high-voltage applications where robust performance is critical.
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