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STF13N60M2N-Channel 600 V 11A (Tc) 25W (Tc) Through Hole TO-220FP
1:$1.4200
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STF13N-991515
ManufacturerSTMicroelectronics
MPN #.STF13N60M2
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetSTF(I)13N60M2(PDF)
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In Stock: 954
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4200
Ext. Price$ 1.4200
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4200$1.4200
50$1.1380$56.8970
100$0.9360$93.6060
500$0.7920$395.7810
1000$0.6730$672.5630
2000$0.6390$1277.1250
5000$0.6140$3070.6250
10000$0.5940$5939.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesMDmesh™ II Plus
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF13
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)580 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF13N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics. It is designed to handle a maximum voltage of 600 V and can conduct a continuous current of up to 11A when mounted to an appropriate heat sink (Tc). The device dissipates up to 25W under similar conditions. Encased in a TO-220FP through-hole package, it offers a low on-state resistance of 380 mOhm when passing a current of 5.5A with a gate voltage of 10V. Additionally, it features an input capacitance of 580 pF at 100V, making it suitable for use in various power management applications.
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