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STF11NM60NDN-Channel 600 V 10A (Tc) 25W (Tc) Through Hole TO-220FP

1:$2.5560

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ABRmicro #.ABR2045-STF11N-996227
ManufacturerSTMicroelectronics
MPN #.STF11NM60ND
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetDatasheetSTx11NM60ND(PDF)
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In Stock: 689
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.5560
Ext. Price$ 2.5560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5560$2.5560
50$2.0250$101.2560
100$1.7360$173.6130
500$1.6980$848.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesFDmesh™ II
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF11
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)850 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance450mOhm @ 5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx11NM60ND
Other Related Documents
STB11NK40Z View All Specifications
PCN Assembly/Origin
Mult Dev Assembly Site 02/Apr/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF11NM60ND from STMicroelectronics is an N-channel MOSFET designed for high-voltage applications. It features a 600 V drain-source breakdown voltage and can handle up to 10A of continuous current under certain conditions. Encased in a TO-220FP package, this discrete component offers a maximum power dissipation of 25W, when mounted with adequate heat sinking. The MOSFET has a 850 pF input capacitance at 50 V, ensuring performance in various electrical environments, and a gate-source voltage rating of ±25V, providing a robust solution for power management tasks. With a gate threshold voltage of 5V at 250µA, it is tailored for use in circuits where efficient voltage regulation and low on-state resistance are essential.
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