STF11N65M5N-Channel 650 V 9A (Tc) 25W (Tc) Through Hole TO-220FP
1:$1.4740
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ABRmicro #.ABR2045-STF11N-972579
ManufacturerSTMicroelectronics
MPN #.STF11N65M5
Estimated Lead Time-
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Datasheet
STx11N65M5(PDF)
STx11N65M5(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4740
Ext. Price$ 1.4740
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$1.4740$73.6840
100$1.2120$121.2310
250$1.1800$295.1090
500$1.0250$512.6560
1250$0.8700$1087.7340
2500$0.8270$2066.5630
5000$0.7960$3979.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ V
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF11
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)644 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance480mOhm @ 4.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
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PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF11N65M5 is an N-Channel MOSFET manufactured by STMicroelectronics, designed to operate with a maximum voltage of 650 V and a current rating of 9 A at the case temperature (Tc). It is housed in a TO-220FP package that facilitates through-hole mounting. The device can dissipate up to 25 watts of power at (Tc). Key electrical characteristics include an input capacitance of 644 pF at 100 V, a gate threshold voltage of 5 V at a 250 µA condition, and a total gate charge of 17 nC at 10 V. These specifications make it suitable for various electronic applications requiring efficient voltage regulation and power management.
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