STF11N65K3N-Channel 650 V 11A (Tc) 35W (Tc) Through Hole TO-220FP
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ABRmicro #.ABR2045-STF11N-1022472
ManufacturerSTMicroelectronics
MPN #.STF11N65K3
Estimated Lead Time-
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Datasheet
STF11N65K3(PDF)
STF11N65K3(PDF)
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Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesSuperMESH3™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTF11
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1180 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance850mOhm @ 3.6A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 100µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF11N65K3 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high voltage applications with a drain-source voltage rating of 650 V and continuous drain current of 11A, provided the case temperature (Tc) allows. Encased in a TO-220FP through-hole package, this MOSFET features a power dissipation of 35W, also dependent on case temperature conditions. It exhibits a gate charge of 42 nC at 10 V, ensuring efficient operation, and a low on-resistance of 850 mOhm at a drain current of 3.6A and gate-source voltage of 10V, contributing to its effectiveness in various electronic circuits.
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