STF10NM60NDN-Channel 600 V 8A (Tc) 25W (Tc) Through Hole TO-220FP
1:$1.5650
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ABRmicro #.ABR2045-STF10N-1039210
ManufacturerSTMicroelectronics
MPN #.STF10NM60ND
Estimated Lead Time-
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Datasheet
STD10NM60ND(PDF)
STD10NM60ND(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.5650
Ext. Price$ 1.5650
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$1.5650$78.2530
100$1.2880$128.7750
250$1.2540$313.4380
500$1.0890$544.5310
1250$0.9240$1155.4690
2500$0.8790$2196.7190
5000$0.8450$4223.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesFDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTF10
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)540 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance550mOhm @ 4A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
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PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF10NM60ND is a semiconductor device manufactured by STMicroelectronics, designed as an N-Channel MOSFET with a voltage rating of 600 V and a current capacity of 8A when operating at the case temperature (Tc). It offers a power dissipation of 25W at Tc, making it suitable for efficiently managing high-voltage applications. The device is encased in a TO-220FP package, which provides a through-hole mounting style, offering durability and ease of integration into electronic assemblies. With a gate-source voltage of ±25V and a threshold voltage of 10V, it features an input capacitance of 540 pF at 50 V, highlighting its electrical characteristics for reliable performance.
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