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STF10N95K5N-Channel 950 V 8A (Tc) 30W (Tc) Through Hole TO-220FP

1:$1.6070

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ABRmicro #.ABR2045-STF10N-993060
ManufacturerSTMicroelectronics
MPN #.STF10N95K5
Estimated Lead Time14 Weeks
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In Stock: 768
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.6070
Ext. Price$ 1.6070
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6070$1.6070
50$1.2750$63.7500
100$1.0920$109.2250
500$1.0680$533.9060
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperMESH5™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTF10
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)950 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)630 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance800mOhm @ 4A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STF10N95K5 is a power N-channel MOSFET manufactured by STMicroelectronics, designed for high-voltage applications with a voltage rating of 950 volts and a current capacity of 8 amps at a case temperature (Tc). Encased in a TO-220FP package, it features a power dissipation of 30 watts. With a gate-source voltage of ±30 volts and a threshold voltage of 5 volts at a gate current of 100 microamperes, this MOSFET offers efficient switching performance and thermal management in a through-hole configuration.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.