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STD90N03L-1N-Channel 30 V 80A (Tc) 95W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-STD90N-995963
ManufacturerSTMicroelectronics
MPN #.STD90N03L-1
Estimated Lead Time-
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DatasheetDatasheetSTD90N03L(-1)(PDF)
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In Stock: 12
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSTripFET™ III
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTD90
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2805 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation95W (Tc)
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 40A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Extended Links
Datasheets
STD90N03L(-1)
Video File
Motor Control in Electric Vehicles
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD90N03L-1 is a power MOSFET manufactured by STMicroelectronics, featuring an N-channel with a drain-source voltage rating of 30V and a continuous drain current of 80A when measured at the case temperature (Tc). It offers a power dissipation capacity of up to 95W under similar conditions and is designed with a Through-Hole IPAK package. The device has an on-resistance characterized by a gate-source voltage of 5V and 10V, with a threshold voltage of 1V at 250µA. It also has a maximum gate-source voltage of ±20V, making it suitable for a range of power management applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.