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STD8NM50NN-Channel 500 V 5A (Tc) 45W (Tc) Surface Mount DPAK

1:$1.8470

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STD8NM-949835
ManufacturerSTMicroelectronics
MPN #.STD8NM50N
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetST(D,P)8NM50N(PDF)
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In Stock: 2556
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.8470
Ext. Price$ 1.8470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8470$1.8470
10$1.5350$15.3530
100$1.2230$122.2940
500$1.0340$516.9060
1000$0.8780$877.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD8NM50
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)364 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance790mOhm @ 2.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ST(D,P)8NM50N
Other Related Documents
STD8NM50N View All Specifications
PCN Packaging
Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD8NM50N is an N-channel MOSFET manufactured by STMicroelectronics, designed for power management applications. It features a drain-source voltage (Vds) rating of 500 V and a current rating of 5A under certain thermal conditions (Tc). This surface-mount component is housed in a DPAK package, providing efficient heat dissipation with a power dissipation capability of 45W at Tc. The part exhibits a low on-resistance of 790 mOhm at 2.5A, 10V, ensuring efficient current conduction. It offers a gate threshold voltage of 4V at 250µA, and can handle gate-source voltages up to ±25V, enhancing its versatility in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.