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STD7NM50NN-Channel 500 V 5A (Tc) 45W (Tc) Surface Mount DPAK
N/A
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ABRmicro #.ABR2045-STD7NM-951097
ManufacturerSTMicroelectronics
MPN #.STD7NM50N
Estimated Lead Time-
SampleGet Free Sample
DatasheetSTx7NM50N(-1)(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesMDmesh™ II
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSTD7
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance780mOhm @ 2.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD7NM50N is a high-voltage N-channel MOSFET manufactured by STMicroelectronics, designed for efficiency in power switching applications. Packaged in a surface mount DPAK, it can handle a maximum of 500 V and 5 A, making it suitable for various demanding environments. The device has a power dissipation capacity of 45W at the case temperature (Tc) and boasts a gate charge of 12 nC at 10 V, ensuring efficient performance in controlling the flow of electrical current. This MOSFET, featuring a robust metal oxide construction, is designed for reliability and compact integration in electronic circuits.
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