STD7N80K5N-Channel 800 V 6A (Tc) 110W (Tc) Surface Mount DPAK
1:$1.6760
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ABRmicro #.ABR2045-STD7N8-1030708
ManufacturerSTMicroelectronics
MPN #.STD7N80K5
Estimated Lead Time14 Weeks
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Datasheet
STx7N80K5(PDF)
STx7N80K5(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.6760
Ext. Price$ 1.6760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6760$1.6760
10$1.3900$13.8980
100$1.1060$110.6060
500$0.9360$468.0310
1000$0.7950$794.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperMESH5™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD7N80
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)360 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance1.2Ohm @ 3A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Other Related Documents
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD7N80K5 is a surface mount N-channel MOSFET manufactured by STMicroelectronics, designed to handle high voltages of up to 800 V with a current capacity of 6 A when properly cooled. It features a maximum power dissipation of 110 W, making it suitable for demanding environments. The MOSFET has a typical on-resistance of 1.2 Ohms when measured with a gate-source voltage of 10 V and a drain current of 3 A. Additionally, it possesses an input capacitance of 360 pF at 100 V. Housed in a DPAK package, this part offers versatility in limiting space setups.
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