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STD6N80K5N-Channel 800 V 4.5A (Tc) 85W (Tc) Surface Mount DPAK

1:$1.8120

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STD6N8-1014428
ManufacturerSTMicroelectronics
MPN #.STD6N80K5
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetDatasheetST(B,D,I,P)6N80K5(PDF)
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In Stock: 7725
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.8120
Ext. Price$ 1.8120
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8120$1.8120
10$1.5020$15.0240
100$1.1950$119.5310
500$1.0120$505.7500
1000$0.8590$858.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperMESH5™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD6N80
Continuous Drain Current (ID) @ 25°C4.5A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)255 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance1.6Ohm @ 2A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ST(B,D,I,P)6N80K5
PCN Assembly/Origin
Assembly Site 22/Dec/2022
PCN Packaging
Mult Dev Inner Box Chg 9/Dec/2021Reel Design Change 22/Aug/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD6N80K5 is a surface mount N-Channel MOSFET manufactured by STMicroelectronics, designed for high voltage applications with a maximum drain-source voltage of 800 V. It can handle a continuous drain current of 4.5A at a case temperature (Tc), and it dissipates up to 85W of power under similar conditions. Housed in a DPAK package, this MOSFET has a low gate charge of 7.5 nC when driven at 10V, making it efficient for fast switching applications. Additionally, it features a drain-source capacitance of 255 pF at 100 V, making it suitable for various switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.