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STD46N6F7N-Channel 60 V 15A (Tc) 60W (Tc) Surface Mount DPAK
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ABRmicro #.ABR2045-STD46N-951182
ManufacturerSTMicroelectronics
MPN #.STD46N6F7
Estimated Lead Time-
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DatasheetSTD46N6F7 Datasheet(PDF)
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Shipping DateNovember 16, 2024
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Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTD46
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1065 pF @ 30 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance14mOhm @ 7.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD46N6F7 from STMicroelectronics is an N-Channel MOSFET featuring a 60V maximum drain-source voltage and a current rating of 15A under specified conditions (Tc). It is designed for efficient performance with a power dissipation capacity of 60W. The MOSFET is housed in a Surface Mount DPAK package, making it suitable for compact designs. With an input capacitance of 1065 pF at 30V, it operates effectively with a gate-source voltage of up to 10V. This component is built for applications requiring reliable switching and conduction characteristics within these electrical parameters.
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