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STD46N6F7N-Channel 60 V 15A (Tc) 60W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-STD46N-951182
ManufacturerSTMicroelectronics
MPN #.STD46N6F7
Estimated Lead Time-
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSTripFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTD46
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1065 pF @ 30 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance14mOhm @ 7.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD46N6F7 from STMicroelectronics is an N-Channel MOSFET featuring a 60V maximum drain-source voltage and a current rating of 15A under specified conditions (Tc). It is designed for efficient performance with a power dissipation capacity of 60W. The MOSFET is housed in a Surface Mount DPAK package, making it suitable for compact designs. With an input capacitance of 1065 pF at 30V, it operates effectively with a gate-source voltage of up to 10V. This component is built for applications requiring reliable switching and conduction characteristics within these electrical parameters.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.