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STD45NF75T4N-Channel 75 V 40A (Tc) 125W (Tc) Surface Mount DPAK
1:$1.5730
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ABRmicro #.ABR2045-STD45N-1020165
ManufacturerSTMicroelectronics
MPN #.STD45NF75T4
Estimated Lead Time26 Weeks
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DatasheetSTD45NF75T4(PDF)
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In Stock: 11071
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5730
Ext. Price$ 1.5730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5730$1.5730
10$1.3100$13.1010
100$1.0420$104.2310
500$0.8820$440.9380
1000$0.7480$748.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesSTripFET™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD45
Continuous Drain Current (ID) @ 25°C40A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1760 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance24mOhm @ 20A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD45NF75T4 is an N-channel MOSFET manufactured by STMicroelectronics, designed for surface-mount applications and housed in a DPAK package. It operates with a voltage rating of 75 volts and can handle a continuous current of up to 40 amps at a case temperature. The device can dissipate up to 125 watts of power under specified conditions. It features a total gate charge and input capacitance of 1760 pF at 25 volts, with a gate-source voltage tolerance of ±20 volts and a gate threshold voltage of 10 volts. This MOSFET is suitable for various switching and amplification tasks within its specified electrical limits.
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