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STD3NK100ZN-Channel 1000 V 2.5A (Tc) 90W (Tc) Surface Mount DPAK

1:$2.0260

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STD3NK-984293
ManufacturerSTMicroelectronics
MPN #.STD3NK100Z
Estimated Lead Time13 Weeks
SampleGet Free Sample
DatasheetDatasheetSTx3NK100Z(PDF)
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In Stock: 5546
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.0260
Ext. Price$ 2.0260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0260$2.0260
10$1.6830$16.8300
100$1.3400$133.9810
500$1.1340$566.8440
1000$0.9630$962.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperMESH™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD3NK100
Continuous Drain Current (ID) @ 25°C2.5A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)601 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation90W (Tc)
RDS(on) Drain-to-Source On Resistance6Ohm @ 1.25A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx3NK100Z
Other Related Documents
STD3NK100Z View All Specifications
PCN Design/Specification
New Lead Frame Design 17/Mar/2023
PCN Packaging
Box Label Chg 28/Jul/2016Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD3NK100Z by STMicroelectronics is a surface-mount N-channel MOSFET housed in a DPAK package. It is designed to handle a maximum drain-source voltage of 1000 volts and a continuous drain current of 2.5 amps at case temperature (Tc). The device can dissipate up to 90 watts of power under suitable thermal conditions. It features a low on-resistance of 6 ohms at 1.25 amps and a gate threshold voltage of 10 volts, with a gate-source voltage tolerance of ±30 volts. This MOSFET is suitable for high-voltage applications where compact surface mounting is desired.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.