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STD35NF06T4N-Channel 60 V 35A (Tc) 80W (Tc) Surface Mount DPAK

1:$1.2390

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STD35N-1018729
ManufacturerSTMicroelectronics
MPN #.STD35NF06T4
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetSTD35NF06(PDF)
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In Stock: 1683
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2390
Ext. Price$ 1.2390
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2390$1.2390
10$1.0160$10.1580
100$0.7910$79.0500
500$0.6700$335.2190
1000$0.5460$546.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD35
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation80W (Tc)
RDS(on) Drain-to-Source On Resistance20mOhm @ 17.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STD35NF06
Other Related Documents
STD35NF06 View All Specifications
PCN Packaging
Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD35NF06T4 from STMicroelectronics is a surface-mount N-Channel MOSFET housed in a DPAK package, suitable for various power management applications. It offers a drain-source voltage rating of 60V and can handle a continuous current of 35A with a power dissipation capability of 80W, both measured at a case temperature of 25°C. The MOSFET has a low on-state resistance of 20mOhm at a gate-source voltage of 10V and a drain current of 17.5A. The device also has an input capacitance of 1300 pF at 25V, contributing to its fast switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.