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STD30PF03L-1P-Channel 30 V 24A (Tc) 70W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-STD30P-969288
ManufacturerSTMicroelectronics
MPN #.STD30PF03L-1
Estimated Lead Time-
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In Stock: 20
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTD30
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1670 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation70W (Tc)
RDS(on) Drain-to-Source On Resistance28mOhm @ 12A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part designated as STD30PF03L-1, manufactured by STMicroelectronics, is a P-Channel MOSFET. It operates with a maximum voltage of 30V and can handle a continuous current of 24A under specified conditions. This device is encapsulated in an IPAK package, which is a through-hole type, and can dissipate up to 70W of power. The MOSFET has a gate-to-source voltage rating of ±16V and features a typical input capacitance of 1670 pF when measured at 25V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.