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STD26P3LLH6P-Channel 30 V 12A (Tc) 40W (Tc) Surface Mount DPAK

1:$0.7690

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ABRmicro #.ABR2045-STD26P-999417
ManufacturerSTMicroelectronics
MPN #.STD26P3LLH6
Estimated Lead Time26 Weeks
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DatasheetDatasheetSTD26P3LLH6(PDF)
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In Stock: 34708
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7690
Ext. Price$ 0.7690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7690$0.7690
10$0.6320$6.3220
100$0.4920$49.1940
500$0.4180$208.7810
1000$0.4120$412.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDeepGATE™, STripFET™ VI
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD26
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1450 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature175°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance30mOhm @ 6A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STD26P3LLH6
PCN Packaging
Box Label Chg 28/Jul/2016Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD26P3LLH6 is a P-channel MOSFET manufactured by STMicroelectronics, designed for efficient power management in electronic systems. It features a breakdown voltage of 30V and can handle a continuous current of 12A when mounted on a suitable thermal surface, with a power dissipation capacity of 40W. Encased in a surface-mount DPAK package, it supports low gate threshold voltages down to 2.5V at 250µA, and exhibits a total gate charge of 12 nC at 4.5V, ensuring low switching losses. The device tolerates gate source voltages up to ±20V, making it a versatile component for various circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.