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STD25NF20N-Channel 200 V 18A (Tc) 110W (Tc) Surface Mount DPAK
1:$1.3160
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ABRmicro #.ABR2045-STD25N-1020695
ManufacturerSTMicroelectronics
MPN #.STD25NF20
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetSTD25NF20(PDF)
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In Stock: 3143
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3160
Ext. Price$ 1.3160
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3160$1.3160
10$1.0970$10.9650
100$0.8730$87.3380
500$0.7380$369.2190
1000$0.6270$626.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesSTripFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD25
Continuous Drain Current (ID) @ 25°C18A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)39 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)940 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance125mOhm @ 10A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD25NF20 is an N-channel MOSFET produced by STMicroelectronics, designed for high-efficiency performance with a voltage rating of 200V and a continuous drain current of 18A. It features a maximum power dissipation of 110W when a case is used, making it suitable for demanding power conditions. The MOSFET is encapsulated in a surface-mount DPAK package, optimizing it for automated assembly processes. It has an input capacitance of 940 pF at 25V and a total gate charge of 39 nC at 10V, which reflects its capability of handling quick switching operations effectively. Overall, the device offers a reliable solution for power management and conversion tasks in compact electronic designs.
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